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アイテム
{"_buckets": {"deposit": "d26fb014-f8e8-4dee-ad44-a39675456121"}, "_deposit": {"id": "12652", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "12652"}, "status": "published"}, "_oai": {"id": "oai:soar-ir.repo.nii.ac.jp:00012652", "sets": ["1222"]}, "author_link": ["38763", "38764", "38765", "38766", "38767", "38768", "38769"], "item_1628147817048": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_6_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2008-01", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "1", "bibliographicPageEnd": "568", "bibliographicPageStart": "566", "bibliographicVolumeNumber": "47", "bibliographic_titles": [{"bibliographic_title": "JAPANESE JOURNAL OF APPLIED PHYSICS"}]}]}, "item_6_description_30": {"attribute_name": "資源タイプ(コンテンツの種類)", "attribute_value_mlt": [{"subitem_description": "Article", "subitem_description_type": "Other"}]}, "item_6_description_31": {"attribute_name": "フォーマット:mimeタイプ", "attribute_value_mlt": [{"subitem_description": "application/pdf", "subitem_description_type": "Other"}]}, "item_6_description_5": {"attribute_name": "引用", "attribute_value_mlt": [{"subitem_description": "JAPANESE JOURNAL OF APPLIED PHYSICS. 47(1):566-568(2008)", "subitem_description_type": "Other"}]}, "item_6_link_3": {"attribute_name": "信州大学研究者総覧へのリンク", "attribute_value_mlt": [{"subitem_link_text": "Kamimura, K", "subitem_link_url": "http://soar-rd.shinshu-u.ac.jp/profile/ja.yVkaZVkh.html"}]}, "item_6_link_67": {"attribute_name": "WoS", "attribute_value_mlt": [{"subitem_link_text": "Web of Science", "subitem_link_url": "http://gateway.isiknowledge.com/gateway/Gateway.cgi?\u0026GWVersion=2\u0026SrcAuth=ShinshuUniv\u0026SrcApp=ShinshuUniv\u0026DestLinkType=FullRecord\u0026DestApp=WOS\u0026KeyUT=000255019500038"}]}, "item_6_publisher_4": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "INST PURE APPLIED PHYSICS"}]}, "item_6_relation_48": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "10.1143/JJAP.47.566"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1143/JJAP.47.566", "subitem_relation_type_select": "DOI"}}]}, "item_6_select_64": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_6_source_id_35": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0021-4922", "subitem_source_identifier_type": "ISSN"}]}, "item_6_source_id_39": {"attribute_name": "NII ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0021-4922", "subitem_source_identifier_type": "ISSN"}]}, "item_6_source_id_40": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA12295836", "subitem_source_identifier_type": "NCID"}]}, "item_6_text_69": {"attribute_name": "wosonly authkey", "attribute_value_mlt": [{"subitem_text_value": "hot wire; CVD; 3C-SiC; SiF4; H-2 dilution; low-temperature film growth"}]}, "item_6_text_70": {"attribute_name": "wosonly keywords", "attribute_value_mlt": [{"subitem_text_value": "AMORPHOUS-SILICON; ALLOY-FILMS; CVD; QUALITY"}]}, "item_6_textarea_68": {"attribute_name": "wosonly abstract", "attribute_value_mlt": [{"subitem_textarea_value": "Microcrystalline SiC films were grown by hot-wire chemical vapor deposition (HW-CVD) at a low substrate temperature using a SiF4/CH4/H-2 mixture, and their structural properties were characterized. Low growth pressure resulted in a narrow full width at half maximum (FWHM) of the Si-C peak in Fourier transform infrared absorption spectroscopy (FT-IR) spectra. The deposition rate and the FWHM value increased with increasing filament temperature. This seemed to be caused by change of the concentration ratio of precursors on the growth surface with increasing filament temperature. Also, the film crystallinity depended on the CH4/SiF4 flow rate ratio, and mu c-3C-SiC(111) films were successfully obtained at low substrate temperature of 250 degrees C."}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Kida, T"}], "nameIdentifiers": [{"nameIdentifier": "38763", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nagasaka, Y"}], "nameIdentifiers": [{"nameIdentifier": "38764", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sakurai, T"}], "nameIdentifiers": [{"nameIdentifier": "38765", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yamakami, T"}], "nameIdentifiers": [{"nameIdentifier": "38766", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hayashibe, R"}], "nameIdentifiers": [{"nameIdentifier": "38767", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Abe, K"}], "nameIdentifiers": [{"nameIdentifier": "38768", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kamimura, K"}], "nameIdentifiers": [{"nameIdentifier": "38769", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2015-09-28"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JJAP1 .pdf", "filesize": [{"value": "243.8 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 243800.0, "url": {"label": "JJAP1 .pdf", "url": "https://soar-ir.repo.nii.ac.jp/record/12652/files/JJAP1 .pdf"}, "version_id": "a1894985-4c0e-4de2-b490-fdf1b33da077"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Growth and characterization of SiC films by hot-wire chemical vapor deposition at low substrate temperature using SiF4/CH4/H-2 mixture", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Growth and characterization of SiC films by hot-wire chemical vapor deposition at low substrate temperature using SiF4/CH4/H-2 mixture", "subitem_title_language": "en"}]}, "item_type_id": "6", "owner": "1", "path": ["1222"], "permalink_uri": "http://hdl.handle.net/10091/1157", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2008-09-17"}, "publish_date": "2008-09-17", "publish_status": "0", "recid": "12652", "relation": {}, "relation_version_is_last": true, "title": ["Growth and characterization of SiC films by hot-wire chemical vapor deposition at low substrate temperature using SiF4/CH4/H-2 mixture"], "weko_shared_id": -1}
Growth and characterization of SiC films by hot-wire chemical vapor deposition at low substrate temperature using SiF4/CH4/H-2 mixture
http://hdl.handle.net/10091/1157
http://hdl.handle.net/10091/115794e5241a-55a6-42e9-958a-e708a6f70e27
名前 / ファイル | ライセンス | アクション |
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JJAP1 .pdf (243.8 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2008-09-17 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Growth and characterization of SiC films by hot-wire chemical vapor deposition at low substrate temperature using SiF4/CH4/H-2 mixture | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Kida, T
× Kida, T× Nagasaka, Y× Sakurai, T× Yamakami, T× Hayashibe, R× Abe, K× Kamimura, K |
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信州大学研究者総覧へのリンク | ||||||
氏名 | Kamimura, K | |||||
URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.yVkaZVkh.html | |||||
出版者 | ||||||
出版者 | INST PURE APPLIED PHYSICS | |||||
引用 | ||||||
内容記述タイプ | Other | |||||
内容記述 | JAPANESE JOURNAL OF APPLIED PHYSICS. 47(1):566-568(2008) | |||||
書誌情報 |
JAPANESE JOURNAL OF APPLIED PHYSICS 巻 47, 号 1, p. 566-568, 発行日 2008-01 |
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資源タイプ(コンテンツの種類) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Article | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0021-4922 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA12295836 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1143/JJAP.47.566 | |||||
関連名称 | 10.1143/JJAP.47.566 | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
WoS | ||||||
表示名 | Web of Science | |||||
URL | http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000255019500038 |