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  1. 060 工学部
  2. 0601 学術論文

Growth and characterization of SiC films by hot-wire chemical vapor deposition at low substrate temperature using SiF4/CH4/H-2 mixture

http://hdl.handle.net/10091/1157
94e5241a-55a6-42e9-958a-e708a6f70e27
名前 / ファイル ライセンス アクション
JJAP1 .pdf JJAP1 .pdf (243.8 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2008-09-17
タイトル
言語 en
タイトル Growth and characterization of SiC films by hot-wire chemical vapor deposition at low substrate temperature using SiF4/CH4/H-2 mixture
言語
言語 eng
資源タイプ
資源 http://purl.org/coar/resource_type/c_6501
タイプ journal article
著者 Kida, T

× Kida, T

WEKO 38763

Kida, T

Search repository
Nagasaka, Y

× Nagasaka, Y

WEKO 38764

Nagasaka, Y

Search repository
Sakurai, T

× Sakurai, T

WEKO 38765

Sakurai, T

Search repository
Yamakami, T

× Yamakami, T

WEKO 38766

Yamakami, T

Search repository
Hayashibe, R

× Hayashibe, R

WEKO 38767

Hayashibe, R

Search repository
Abe, K

× Abe, K

WEKO 38768

Abe, K

Search repository
Kamimura, K

× Kamimura, K

WEKO 38769

Kamimura, K

Search repository
信州大学研究者総覧へのリンク
氏名 Kamimura, K
URL http://soar-rd.shinshu-u.ac.jp/profile/ja.yVkaZVkh.html
出版者
出版者 INST PURE APPLIED PHYSICS
引用
内容記述タイプ Other
内容記述 JAPANESE JOURNAL OF APPLIED PHYSICS. 47(1):566-568(2008)
書誌情報 JAPANESE JOURNAL OF APPLIED PHYSICS

巻 47, 号 1, p. 566-568, 発行日 2008-01
資源タイプ(コンテンツの種類)
内容記述タイプ Other
内容記述 Article
ISSN
収録物識別子タイプ ISSN
収録物識別子 0021-4922
書誌レコードID
収録物識別子タイプ NCID
収録物識別子 AA12295836
DOI
関連識別子
識別子タイプ DOI
関連識別子 https://doi.org/10.1143/JJAP.47.566
関連名称
関連名称 10.1143/JJAP.47.566
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
WoS
表示名 Web of Science
URL http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000255019500038
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