{"_buckets": {"deposit": "d26fb014-f8e8-4dee-ad44-a39675456121"}, "_deposit": {"id": "12652", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "12652"}, "status": "published"}, "_oai": {"id": "oai:soar-ir.repo.nii.ac.jp:00012652", "sets": ["1221:1222"]}, "item_6_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2008-01", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "1", "bibliographicPageEnd": "568", "bibliographicPageStart": "566", "bibliographicVolumeNumber": "47", "bibliographic_titles": [{"bibliographic_title": "JAPANESE JOURNAL OF APPLIED PHYSICS"}]}]}, "item_6_description_30": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7\uff08\u30b3\u30f3\u30c6\u30f3\u30c4\u306e\u7a2e\u985e\uff09", "attribute_value_mlt": [{"subitem_description": "Article", "subitem_description_type": "Other"}]}, "item_6_description_31": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8\uff1amime\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"subitem_description": "application/pdf", "subitem_description_type": "Other"}]}, "item_6_description_5": {"attribute_name": "\u5f15\u7528", "attribute_value_mlt": [{"subitem_description": "JAPANESE JOURNAL OF APPLIED PHYSICS. 47(1):566-568(2008)", "subitem_description_type": "Other"}]}, "item_6_link_3": {"attribute_name": "\u4fe1\u5dde\u5927\u5b66\u7814\u7a76\u8005\u7dcf\u89a7\u3078\u306e\u30ea\u30f3\u30af", "attribute_value_mlt": [{"subitem_link_text": "Kamimura, K", "subitem_link_url": "http://soar-rd.shinshu-u.ac.jp/profile/ja.yVkaZVkh.html"}]}, "item_6_link_67": {"attribute_name": "WoS", "attribute_value_mlt": [{"subitem_link_text": "Web of Science", "subitem_link_url": "http://gateway.isiknowledge.com/gateway/Gateway.cgi?\u0026GWVersion=2\u0026SrcAuth=ShinshuUniv\u0026SrcApp=ShinshuUniv\u0026DestLinkType=FullRecord\u0026DestApp=WOS\u0026KeyUT=000255019500038"}]}, "item_6_publisher_4": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "INST PURE APPLIED PHYSICS"}]}, "item_6_relation_48": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "10.1143/JJAP.47.566"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://dx.doi.org/10.1143/JJAP.47.566", "subitem_relation_type_select": "DOI"}}]}, "item_6_select_64": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_6_source_id_35": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0021-4922", "subitem_source_identifier_type": "ISSN"}]}, "item_6_source_id_39": {"attribute_name": "NII ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0021-4922", "subitem_source_identifier_type": "ISSN"}]}, "item_6_source_id_40": {"attribute_name": "\u66f8\u8a8c\u30ec\u30b3\u30fc\u30c9ID", "attribute_value_mlt": [{"subitem_source_identifier": "AA12295836", "subitem_source_identifier_type": "NCID"}]}, "item_6_text_69": {"attribute_name": "wosonly authkey", "attribute_value_mlt": [{"subitem_text_value": "hot wire; CVD; 3C-SiC; SiF4; H-2 dilution; low-temperature film growth"}]}, "item_6_text_70": {"attribute_name": "wosonly keywords", "attribute_value_mlt": [{"subitem_text_value": "AMORPHOUS-SILICON; ALLOY-FILMS; CVD; QUALITY"}]}, "item_6_textarea_68": {"attribute_name": "wosonly abstract", "attribute_value_mlt": [{"subitem_textarea_value": "Microcrystalline SiC films were grown by hot-wire chemical vapor deposition (HW-CVD) at a low substrate temperature using a SiF4/CH4/H-2 mixture, and their structural properties were characterized. Low growth pressure resulted in a narrow full width at half maximum (FWHM) of the Si-C peak in Fourier transform infrared absorption spectroscopy (FT-IR) spectra. The deposition rate and the FWHM value increased with increasing filament temperature. This seemed to be caused by change of the concentration ratio of precursors on the growth surface with increasing filament temperature. Also, the film crystallinity depended on the CH4/SiF4 flow rate ratio, and mu c-3C-SiC(111) films were successfully obtained at low substrate temperature of 250 degrees C."}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Kida,  T"}], "nameIdentifiers": [{"nameIdentifier": "38763", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nagasaka,  Y"}], "nameIdentifiers": [{"nameIdentifier": "38764", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sakurai,  T"}], "nameIdentifiers": [{"nameIdentifier": "38765", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yamakami,  T"}], "nameIdentifiers": [{"nameIdentifier": "38766", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hayashibe,  R"}], "nameIdentifiers": [{"nameIdentifier": "38767", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Abe,  K"}], "nameIdentifiers": [{"nameIdentifier": "38768", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kamimura,  K"}], "nameIdentifiers": [{"nameIdentifier": "38769", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2015-09-28"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JJAP1\u3000.pdf", "filesize": [{"value": "243.8 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 243800.0, "url": {"label": "JJAP1\u3000.pdf", "url": "https://soar-ir.repo.nii.ac.jp/record/12652/files/JJAP1\u3000.pdf"}, "version_id": "a1894985-4c0e-4de2-b490-fdf1b33da077"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Growth and characterization of SiC films by hot-wire chemical vapor deposition at low substrate temperature using SiF4/CH4/H-2 mixture", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Growth and characterization of SiC films by hot-wire chemical vapor deposition at low substrate temperature using SiF4/CH4/H-2 mixture"}]}, "item_type_id": "6", "owner": "1", "path": ["1221/1222"], "permalink_uri": "http://hdl.handle.net/10091/1157", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2008-09-17"}, "publish_date": "2008-09-17", "publish_status": "0", "recid": "12652", "relation": {}, "relation_version_is_last": true, "title": ["Growth and characterization of SiC films by hot-wire chemical vapor deposition at low substrate temperature using SiF4/CH4/H-2 mixture"], "weko_shared_id": 3}