{"_buckets": {"deposit": "0c03aaaa-f1b5-4078-90c8-f844093d9add"}, "_deposit": {"id": "12673", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "12673"}, "status": "published"}, "_oai": {"id": "oai:soar-ir.repo.nii.ac.jp:00012673", "sets": ["1221:1222"]}, "item_6_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2008-01-15", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "5", "bibliographicPageEnd": "640", "bibliographicPageStart": "637", "bibliographicVolumeNumber": "516", "bibliographic_titles": [{"bibliographic_title": "Thin solid films"}]}]}, "item_6_description_30": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7\uff08\u30b3\u30f3\u30c6\u30f3\u30c4\u306e\u7a2e\u985e\uff09", "attribute_value_mlt": [{"subitem_description": "Article", "subitem_description_type": "Other"}]}, "item_6_description_31": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8\uff1amime\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"subitem_description": "application/pdf", "subitem_description_type": "Other"}]}, "item_6_description_5": {"attribute_name": "\u5f15\u7528", "attribute_value_mlt": [{"subitem_description": "THIN SOLID FILMS. 516(5): 637-640 (2008)", "subitem_description_type": "Other"}]}, "item_6_link_3": {"attribute_name": "\u4fe1\u5dde\u5927\u5b66\u7814\u7a76\u8005\u7dcf\u89a7\u3078\u306e\u30ea\u30f3\u30af", "attribute_value_mlt": [{"subitem_link_text": "Kamimura, K", "subitem_link_url": "http://soar-rd.shinshu-u.ac.jp/profile/ja.yVkaZVkh.html"}]}, "item_6_link_67": {"attribute_name": "WoS", "attribute_value_mlt": [{"subitem_link_text": "Web of Science", "subitem_link_url": "http://gateway.isiknowledge.com/gateway/Gateway.cgi?\u0026GWVersion=2\u0026SrcAuth=ShinshuUniv\u0026SrcApp=ShinshuUniv\u0026DestLinkType=FullRecord\u0026DestApp=WOS\u0026KeyUT=000252285900038"}]}, "item_6_publisher_4": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "ELSEVIER SCIENCE SA"}]}, "item_6_relation_48": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "10.1016/j.tsf.2007.06.199"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://dx.doi.org/10.1016/j.tsf.2007.06.199", "subitem_relation_type_select": "DOI"}}]}, "item_6_select_64": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_6_source_id_35": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0040-6090", "subitem_source_identifier_type": "ISSN"}]}, "item_6_source_id_39": {"attribute_name": "NII ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0040-6090", "subitem_source_identifier_type": "ISSN"}]}, "item_6_source_id_40": {"attribute_name": "\u66f8\u8a8c\u30ec\u30b3\u30fc\u30c9ID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00863068", "subitem_source_identifier_type": "NCID"}]}, "item_6_text_69": {"attribute_name": "wosonly authkey", "attribute_value_mlt": [{"subitem_text_value": "hot-wire; CVD; 3C-SiC; SiF4; H-2 dilution"}]}, "item_6_text_70": {"attribute_name": "wosonly keywords", "attribute_value_mlt": [{"subitem_text_value": "CHEMICAL-VAPOR-DEPOSITION; GAS-PHASE REACTIONS; AMORPHOUS-SILICON; TEMPERATURE"}]}, "item_6_textarea_68": {"attribute_name": "wosonly abstract", "attribute_value_mlt": [{"subitem_textarea_value": "SiC films were synthesized by hot-wire chemical vapor deposition using a tungsten filament and a gas mixture of SiF4 and CH4. The etching of the substrate instead of the film growth occurred on the samples prepared using only source gases without H-2 dilution. The atomic or molecular hydrogen was believed to control the density of radicals containing F in a gas phase or on a growth surface. Polycrystalline 3C-SiC(111) films were successfully obtained at substrate temperatures lower than 500 degrees C by using H-2 dilution. The growth mode limited by source-gas supply was found to be important to obtain polycrystalline SiC films. The SiC film grown at higher deposition pressure was amorphous and contained no Si-H-x bonds but 6% fluorine. In SiF4/CH4/H-2 system, the radicals containing F are considered to play very important roles in the reactions both on a growth surface and in a gas-phase. (C) 2007 Elsevier B.V. All rights reserved."}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Abe,  K"}], "nameIdentifiers": [{"nameIdentifier": "38874", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nagasaka,  Y"}], "nameIdentifiers": [{"nameIdentifier": "38875", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kida,  T"}], "nameIdentifiers": [{"nameIdentifier": "38876", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yamakami,  T"}], "nameIdentifiers": [{"nameIdentifier": "38877", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hayashibe,  R"}], "nameIdentifiers": [{"nameIdentifier": "38878", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kamimura,  K"}], "nameIdentifiers": [{"nameIdentifier": "38879", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2015-09-28"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "K-ABEmanu.pdf", "filesize": [{"value": "280.4 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 280400.0, "url": {"label": "K-ABEmanu.pdf", "url": "https://soar-ir.repo.nii.ac.jp/record/12673/files/K-ABEmanu.pdf"}, "version_id": "129d929c-89da-4640-99ae-382e1d3147c4"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Characterization of polycrystalline SiC films grown by HW-CVD using silicon tetrafluoride", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Characterization of polycrystalline SiC films grown by HW-CVD using silicon tetrafluoride"}]}, "item_type_id": "6", "owner": "1", "path": ["1221/1222"], "permalink_uri": "http://hdl.handle.net/10091/1007", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2008-02-28"}, "publish_date": "2008-02-28", "publish_status": "0", "recid": "12673", "relation": {}, "relation_version_is_last": true, "title": ["Characterization of polycrystalline SiC films grown by HW-CVD using silicon tetrafluoride"], "weko_shared_id": 3}