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  1. 060 工学部
  2. 0602 紀要
  3. 06021 信州大学工学部紀要
  4. Vol. 06

トランジスタの劣化に就いて

http://hdl.handle.net/10091/11018
95c2801b-7b22-4639-8a75-c8c3842bfe8b
名前 / ファイル ライセンス アクション
Engineering06-01.pdf Engineering06-01.pdf (340.6 kB)
Item type 紀要論文 / Departmental Bulletin Paper(1)
公開日 2011-01-05
タイトル
タイトル トランジスタの劣化に就いて
言語
言語 jpn
資源タイプ
資源 http://purl.org/coar/resource_type/c_6501
タイプ departmental bulletin paper
その他(別言語等)のタイトル
その他のタイトル The Deterioration of the Transistor
著者 中野, 朝安

× 中野, 朝安

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中野, 朝安

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出版者
出版者 信州大学工学部
引用
内容記述タイプ Other
内容記述 信州大学工学部紀要 6: 1-8 (1956)
書誌情報 信州大学工学部紀要

巻 6, p. 1-8, 発行日 1956-12-25
抄録
内容記述タイプ Abstract
内容記述 This paper deals with the deterioration of the transistor caused by the water vapor or gases in atmosphere and the heat generated by the backward current. It is said that the life of transistor is very long, but as the affair now stands, the characteristics are gradually changed. Its cause is mainly due to water vapor, but we have assumed that it is due to the effects of oxyzen and water vapor duffusing into Ge. From these results, surface conductance is changed and deterioration is occurred. The large current deterioration is due to the same reason. And so one of its counter-measures is the spread of the insulator solvent on the barrier. The cooling of the transistor in market is so insufficient that the effect of this technic may be covered by increasing the backward satulation current. But this technic is of no use, so we must examine the duffusing effects of gases which may be considered as the true cause of the deterioration.
資源タイプ(コンテンツの種類)
内容記述タイプ Other
内容記述 Article
ISSN
収録物識別子タイプ ISSN
収録物識別子 0037-3818
書誌レコードID
収録物識別子タイプ NCID
収録物識別子 AN00121228
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