Item type |
学術雑誌論文 / Journal Article(1) |
公開日 |
2010-10-20 |
タイトル |
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タイトル |
Thin-film and single-crystal transistors based on a trifluoromethyl-substituted alternating (thiophene/phenylene)-co-oligomer |
言語 |
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言語 |
eng |
DOI |
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関連識別子 |
https://doi.org/10.1016/j.orgel.2010.06.010 |
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関連名称 |
10.1016/j.orgel.2010.06.010 |
キーワード |
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主題 |
Organic thin-film transistors, Organic field-effect transistors, n-Type semiconductors, Alternating co-oligomer (Thiophene/phenylene)-co-oligomer, Electron mobility |
資源タイプ |
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資源 |
http://purl.org/coar/resource_type/c_6501 |
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タイプ |
journal article |
著者 |
Ichikawa, Musubu
Kato, Tatsuya
Uchino, Tetsuro
Tsuzuki, Takeo
Inoue, Masamitsu
Jeon, Hyeon-Gu
Koyama, Toshiki
Taniguchi, Yoshio
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信州大学研究者総覧へのリンク |
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氏名 |
Ichikawa, Musubu |
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URL |
http://soar-rd.shinshu-u.ac.jp/profile/ja.WenUjFkV.html |
信州大学研究者総覧へのリンク |
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氏名 |
Koyama, Toshiki |
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URL |
http://soar-rd.shinshu-u.ac.jp/profile/ja.ZNkUjekV.html |
信州大学研究者総覧へのリンク |
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氏名 |
Taniguchi, Yoshio |
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URL |
http://soar-rd.shinshu-u.ac.jp/profile/ja.HCfpjekV.html |
出版者 |
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出版者 |
ELSEVIER SCIENCE BV |
引用 |
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内容記述 |
Organic Electronics. 11(9):1549-1554 (2010) |
書誌情報 |
Organic Electronics
巻 11,
号 9,
p. 1549-1554,
発行日 2010-09
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抄録 |
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内容記述 |
We demonstrated the performance of thin-film transistors (TFTs) and single-crystal field-effect transistors (FETs) based on a trifluoromethyl-substituted alternating (thiophene/phenylene)-co-oligomer (AC5-CF3), 1,4-bis(5'-(4 ''-trifluoromethylphenyl)thiophene-2'-yl) benzene. An FET with a fine AC5-CF3 single-crystal demonstrated field-effect mobility as high as 3.1 cm(2) V-1 s(-1). This value implies that AC5-CF3 must be a useful n-type organic semiconducting material. The performance of AC5-CF3 TFTs depended on the substrate temperatures at which AC5-CF3 thin films were deposited. From the viewpoint of mobility, threshold voltage and sub-threshold slope, we obtained the highest performance at the substrate temperature of 100 degrees C. This was because a higher substrate temperature for deposition enlarged the size of grains in AC-CF3 thin films and improved the characteristics of grain boundaries. However, 120 degrees C depositions of AC5-CF3 induced deep valley-like cracks in the thin films, probably because of the difference between the coefficients of thermal expansion for AC5-CF3 thin films and silicon wafer substrates, resulting in effects such as worsening mobility. AC5-CF3 TFTs prepared at 100 degrees C deposition showed no channel length dependence of the field-effect mobility, and their average field-effect mobility was 0.55 +/- 0.05 cm(2) V-1 s(-1). |
資源タイプ(コンテンツの種類) |
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内容記述 |
Article |
ISSN |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
1566-1199 |
書誌レコードID |
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収録物識別子タイプ |
NCID |
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収録物識別子 |
AA11621763 |
権利 |
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権利情報 |
Copyright (c) 2010 Elsevier B.V. |
出版タイプ |
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出版タイプ |
AM |
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出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
WoS |
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URL |
http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000281519700011 |