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Influence of Ge composition in the Cu2Sn1-xGexS3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor
http://hdl.handle.net/10091/00018600
http://hdl.handle.net/10091/0001860085ad7eae-bedb-4cb0-9a81-71d072f7a39e
| 名前 / ファイル | ライセンス | アクション |
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Influence_Ge_composition_Cu2Sn1-xGexS3_thin-film.pdf (11.9 MB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||||||
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| 公開日 | 2016-02-03 | |||||||||||||||||||||
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| タイトル | Influence of Ge composition in the Cu2Sn1-xGexS3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor | |||||||||||||||||||||
| 言語 | ||||||||||||||||||||||
| 言語 | eng | |||||||||||||||||||||
| DOI | ||||||||||||||||||||||
| 関連識別子 | https://doi.org/10.1016/j.solmat.2015.04.030 | |||||||||||||||||||||
| 関連名称 | 10.1016/j.solmat.2015.04.030 | |||||||||||||||||||||
| キーワード | ||||||||||||||||||||||
| 主題 | Cu2Sn1-xGexS3, Sulfurization, Thin film, Raman spectrum, Compound semiconductor, Solar cell | |||||||||||||||||||||
| 資源タイプ | ||||||||||||||||||||||
| 資源 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||||||
| タイプ | journal article | |||||||||||||||||||||
| 著者 |
Myo, Than Htay
× Myo, Than Htay
× Mandokoro, Takahiro
× Seki, Hiroaki
× Sakaizawa, Takanori
× Momose, Noritaka
× Taishi, Toshinori
× Hashimoto, Yoshio
× Ito, Kentaro
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| 信州大学研究者総覧へのリンク | ||||||||||||||||||||||
| 氏名 | Myo, Than Htay | |||||||||||||||||||||
| URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.ZpTFbpkh.html | |||||||||||||||||||||
| 信州大学研究者総覧へのリンク | ||||||||||||||||||||||
| 氏名 | Taishi, Toshinori | |||||||||||||||||||||
| URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.jhTePmSF.html | |||||||||||||||||||||
| 信州大学研究者総覧へのリンク | ||||||||||||||||||||||
| 氏名 | Hashimoto, Yoshio | |||||||||||||||||||||
| URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.gUTUZVkh.html | |||||||||||||||||||||
| 出版者 | ||||||||||||||||||||||
| 出版者 | ELSEVIER SCIENCE BV | |||||||||||||||||||||
| 引用 | ||||||||||||||||||||||
| 内容記述 | SOLAR ENERGY MATERIALS AND SOLAR CELLS. 140:312-319 (2015) | |||||||||||||||||||||
| 書誌情報 |
SOLAR ENERGY MATERIALS AND SOLAR CELLS 巻 140, p. 312-319, 発行日 2015-09 |
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| 抄録 | ||||||||||||||||||||||
| 内容記述 | Cu2Sn1-xGexS3 thin-film absorbers are prepared by sulfurization of laminated precursors. The crystal grain size is enhanced under higher growth temperature and/or sulfur pressure. By the XRD and Raman analyses, the crystal alloy is considered to be composed of majority monoclinic phase with minority secondary phase such as Cu-2(Sn1-xGex)(3)S-7 throughout the whole Ge/(Ge+Sn) composition range. The optical band gap is observed to be varied between 0.94 eV and 1.30 eV in relation with the Ge contents. A photovoltaic conversion efficiency of about 2% is obtained in the sample utilizing Cu2Sn0.6Ge0.4S3 absorber. (C) 2015 Elsevier B.V. All rights reserved. | |||||||||||||||||||||
| 資源タイプ（コンテンツの種類） | ||||||||||||||||||||||
| ISSN | ||||||||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||||||||
| 収録物識別子 | 0927-0248 | |||||||||||||||||||||
| 書誌レコードID | ||||||||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||||||||
| 収録物識別子 | AA10827286 | |||||||||||||||||||||
| 権利 | ||||||||||||||||||||||
| 権利情報 | © 2015. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ | |||||||||||||||||||||
| 出版タイプ | ||||||||||||||||||||||
| 出版タイプ | AM | |||||||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||||||||||||
| WoS | ||||||||||||||||||||||
| URL | http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000356746800041 | |||||||||||||||||||||
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Cite as
Myo, Than Htay, Mandokoro, Takahiro, Seki, Hiroaki, Sakaizawa, Takanori, Momose, Noritaka, Taishi, Toshinori, Hashimoto, Yoshio, Ito, Kentaro, 2015, Influence of Ge composition in the Cu2Sn1-xGexS3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor: ELSEVIER SCIENCE BV, 312–319 p.
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