{"_buckets": {"deposit": "6329667e-1745-47a0-b822-3dce898d486d"}, "_deposit": {"id": "17831", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "17831"}, "status": "published"}, "_oai": {"id": "oai:soar-ir.repo.nii.ac.jp:00017831", "sets": ["1221:1222"]}, "item_6_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2015-09", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "319", "bibliographicPageStart": "312", "bibliographicVolumeNumber": "140", "bibliographic_titles": [{"bibliographic_title": "SOLAR ENERGY MATERIALS AND SOLAR CELLS"}]}]}, "item_6_description_20": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "Cu2Sn1-xGexS3 thin-film absorbers are prepared by sulfurization of laminated precursors. The crystal grain size is enhanced under higher growth temperature and/or sulfur pressure. By the XRD and Raman analyses, the crystal alloy is considered to be composed of majority monoclinic phase with minority secondary phase such as Cu-2(Sn1-xGex)(3)S-7 throughout the whole Ge/(Ge+Sn) composition range. The optical band gap is observed to be varied between 0.94 eV and 1.30 eV in relation with the Ge contents. A photovoltaic conversion efficiency of about 2% is obtained in the sample utilizing Cu2Sn0.6Ge0.4S3 absorber. (C) 2015 Elsevier B.V. All rights reserved.", "subitem_description_type": "Abstract"}]}, "item_6_description_30": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7\uff08\u30b3\u30f3\u30c6\u30f3\u30c4\u306e\u7a2e\u985e\uff09", "attribute_value_mlt": [{"subitem_description": "Article", "subitem_description_type": "Other"}]}, "item_6_description_5": {"attribute_name": "\u5f15\u7528", "attribute_value_mlt": [{"subitem_description": "SOLAR ENERGY MATERIALS AND SOLAR CELLS. 140:312-319 (2015)", "subitem_description_type": "Other"}]}, "item_6_link_3": {"attribute_name": "\u4fe1\u5dde\u5927\u5b66\u7814\u7a76\u8005\u7dcf\u89a7\u3078\u306e\u30ea\u30f3\u30af", "attribute_value_mlt": [{"subitem_link_text": "Myo, Than Htay", "subitem_link_url": "http://soar-rd.shinshu-u.ac.jp/profile/ja.ZpTFbpkh.html"}, {"subitem_link_text": "Taishi, Toshinori", "subitem_link_url": "http://soar-rd.shinshu-u.ac.jp/profile/ja.jhTePmSF.html"}, {"subitem_link_text": "Hashimoto, Yoshio", "subitem_link_url": "http://soar-rd.shinshu-u.ac.jp/profile/ja.gUTUZVkh.html"}]}, "item_6_link_67": {"attribute_name": "WoS", "attribute_value_mlt": [{"subitem_link_text": "Web of Science", "subitem_link_url": "http://gateway.isiknowledge.com/gateway/Gateway.cgi?\u0026GWVersion=2\u0026SrcAuth=ShinshuUniv\u0026SrcApp=ShinshuUniv\u0026DestLinkType=FullRecord\u0026DestApp=WOS\u0026KeyUT=000356746800041"}]}, "item_6_publisher_4": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "ELSEVIER SCIENCE BV"}]}, "item_6_relation_48": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "10.1016/j.solmat.2015.04.030"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://dx.doi.org/10.1016/j.solmat.2015.04.030", "subitem_relation_type_select": "DOI"}}]}, "item_6_rights_62": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "\u00a9 2015. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ "}]}, "item_6_select_64": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_6_source_id_35": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0927-0248", "subitem_source_identifier_type": "ISSN"}]}, "item_6_source_id_39": {"attribute_name": "NII ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0927-0248", "subitem_source_identifier_type": "ISSN"}]}, "item_6_source_id_40": {"attribute_name": "\u66f8\u8a8c\u30ec\u30b3\u30fc\u30c9ID", "attribute_value_mlt": [{"subitem_source_identifier": "AA10827286", "subitem_source_identifier_type": "NCID"}]}, "item_6_text_69": {"attribute_name": "wosonly authkey", "attribute_value_mlt": [{"subitem_text_value": "Cu2Sn1-xGexS3; Sulfurization; Thin film; Raman spectrum; Compound semiconductor; Solar cell"}]}, "item_6_text_70": {"attribute_name": "wosonly keywords", "attribute_value_mlt": [{"subitem_text_value": "CU2SNS3 SOLAR-CELL; CU-SN-S; CRYSTAL-STRUCTURE; OPTICAL-PROPERTIES; CU2GES3; SULFIDES"}]}, "item_6_textarea_68": {"attribute_name": "wosonly abstract", "attribute_value_mlt": [{"subitem_textarea_value": "Cu2Sn1-xGexS3 thin-film absorbers are prepared by sulfurization of laminated precursors. The crystal grain size is enhanced under higher growth temperature and/or sulfur pressure. By the XRD and Raman analyses, the crystal alloy is considered to be composed of majority monoclinic phase with minority secondary phase such as Cu-2(Sn1-xGex)(3)S-7 throughout the whole Ge/(Ge+Sn) composition range. The optical band gap is observed to be varied between 0.94 eV and 1.30 eV in relation with the Ge contents. A photovoltaic conversion efficiency of about 2% is obtained in the sample utilizing Cu2Sn0.6Ge0.4S3 absorber. (C) 2015 Elsevier B.V. All rights reserved."}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Myo, Than Htay"}], "nameIdentifiers": [{"nameIdentifier": "49783", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Mandokoro,  Takahiro"}], "nameIdentifiers": [{"nameIdentifier": "49784", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Seki,  Hiroaki"}], "nameIdentifiers": [{"nameIdentifier": "49785", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sakaizawa,  Takanori"}], "nameIdentifiers": [{"nameIdentifier": "49786", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Momose,  Noritaka"}], "nameIdentifiers": [{"nameIdentifier": "49787", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Taishi,  Toshinori"}], "nameIdentifiers": [{"nameIdentifier": "49788", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hashimoto,  Yoshio"}], "nameIdentifiers": [{"nameIdentifier": "49789", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ito,  Kentaro"}], "nameIdentifiers": [{"nameIdentifier": "49790", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-09-01"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "Influence_Ge_composition_Cu2Sn1-xGexS3_thin-film.pdf", "filesize": [{"value": "11.9 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensefree": "\u00a9 2015. 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