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Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation
http://hdl.handle.net/10091/00019264
http://hdl.handle.net/10091/000192647ce925c1-cc2b-4f42-9c27-3ef0d3d0a6ec
| 名前 / ファイル | ライセンス | アクション |
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MSF778-780_pp631-634.pdf (524.1 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||||
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| 公開日 | 2016-11-01 | |||||||||||||||||||
| タイトル | ||||||||||||||||||||
| タイトル | Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation | |||||||||||||||||||
| 言語 | ||||||||||||||||||||
| 言語 | eng | |||||||||||||||||||
| DOI | ||||||||||||||||||||
| 関連識別子 | https://doi.org/10.4028/www.scientific.net/MSF.778-780.631 | |||||||||||||||||||
| 関連名称 | 10.4028/www.scientific.net/MSF.778-780.631 | |||||||||||||||||||
| キーワード | ||||||||||||||||||||
| 主題 | MIS, Nitride, TEOS | |||||||||||||||||||
| 資源タイプ | ||||||||||||||||||||
| 資源 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||||
| タイプ | journal article | |||||||||||||||||||
| 著者 |
Akahane, Yoshiyuki
× Akahane, Yoshiyuki
× Kano, Takuo
× Kimura, Kyosuke
× Komatsu, Hiroki
× Watanabe, Yukimune
× Yamakami, Tomohiko
× Kamimura Kiichi
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| 信州大学研究者総覧へのリンク | ||||||||||||||||||||
| 氏名 | Kamimura, Kiichi | |||||||||||||||||||
| URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.yVkaZVkh.html | |||||||||||||||||||
| 出版者 | ||||||||||||||||||||
| 出版者 | Trans Tech Publications | |||||||||||||||||||
| 引用 | ||||||||||||||||||||
| 内容記述 | Materials Science Forum, Vols. 778-780, pp. 631-634 (2014) | |||||||||||||||||||
| 書誌情報 |
Materials Science Forum 巻 778-780, p. 631-634, 発行日 2014-02 |
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| 抄録 | ||||||||||||||||||||
| 内容記述 | A nitride layer was formed on a SiC surface by plasma nitridation using pure nitrogen as the reaction gas at the temperature from 800°C to 1400°C. The surface was characterized by XPS. The XPS measurement showed that an oxinitride layer was formed on the SiC surface by the plasma nitridation. The high process temperature seemed to be effective to activate the niridation reaction. A SiO2 film was deposited on the nitridation layer to form SiO2/nitride/SiC structure. The interface state density of the SiO2/nitride/SiC structure was lower than that of the SiO2/SiC structure. This suggested that the nitridation was effective to improve the interface property. | |||||||||||||||||||
| 資源タイプ（コンテンツの種類） | ||||||||||||||||||||
| ISSN | ||||||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||||||
| 収録物識別子 | 1662-9752 | |||||||||||||||||||
| 権利 | ||||||||||||||||||||
| 権利情報 | © 2014 Trans Tech Publications, Switzerland | |||||||||||||||||||
| 出版タイプ | ||||||||||||||||||||
| 出版タイプ | AM | |||||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||||||||||
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Cite as
Akahane, Yoshiyuki, Kano, Takuo, Kimura, Kyosuke, Komatsu, Hiroki, Watanabe, Yukimune, Yamakami, Tomohiko, Kamimura Kiichi, 2014, Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation: Trans Tech Publications, 631–634 p.
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