ログイン
言語:

WEKO3

  • トップ
  • コミュニティ
  • ランキング
AND
To
lat lon distance
To

Field does not validate



インデックスリンク

インデックスツリー

メールアドレスを入力してください。

WEKO

One fine body…

WEKO

One fine body…

アイテム

{"_buckets": {"deposit": "439d9e38-e6a6-4218-97f4-e7e99dfc6966"}, "_deposit": {"id": "18502", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "18502"}, "status": "published"}, "_oai": {"id": "oai:soar-ir.repo.nii.ac.jp:00018502", "sets": ["1221:1222"]}, "author_link": ["51539", "51540", "51541", "51542", "51543", "51544", "51545"], "item_1628147817048": {"attribute_name": "\u51fa\u7248\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_6_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2014-02", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "634", "bibliographicPageStart": "631", "bibliographicVolumeNumber": "778-780", "bibliographic_titles": [{"bibliographic_title": "Materials Science Forum"}]}]}, "item_6_description_20": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "A nitride layer was formed on a SiC surface by plasma nitridation using pure nitrogen as the reaction gas at the temperature from 800\u00b0C to 1400\u00b0C. The surface was characterized by XPS. The XPS measurement showed that an oxinitride layer was formed on the SiC surface by the plasma nitridation. The high process temperature seemed to be effective to activate the niridation reaction. A SiO2 film was deposited on the nitridation layer to form SiO2/nitride/SiC structure. The interface state density of the SiO2/nitride/SiC structure was lower than that of the SiO2/SiC structure. This suggested that the nitridation was effective to improve the interface property. ", "subitem_description_type": "Abstract"}]}, "item_6_description_30": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7\uff08\u30b3\u30f3\u30c6\u30f3\u30c4\u306e\u7a2e\u985e\uff09", "attribute_value_mlt": [{"subitem_description": "Article", "subitem_description_type": "Other"}]}, "item_6_description_5": {"attribute_name": "\u5f15\u7528", "attribute_value_mlt": [{"subitem_description": "Materials Science Forum, Vols. 778-780, pp. 631-634 (2014)", "subitem_description_type": "Other"}]}, "item_6_link_3": {"attribute_name": "\u4fe1\u5dde\u5927\u5b66\u7814\u7a76\u8005\u7dcf\u89a7\u3078\u306e\u30ea\u30f3\u30af", "attribute_value_mlt": [{"subitem_link_text": "Kamimura, Kiichi", "subitem_link_url": "http://soar-rd.shinshu-u.ac.jp/profile/ja.yVkaZVkh.html"}]}, "item_6_publisher_4": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "Trans Tech Publications"}]}, "item_6_relation_48": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "10.4028/www.scientific.net/MSF.778-780.631"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.4028/www.scientific.net/MSF.778-780.631", "subitem_relation_type_select": "DOI"}}]}, "item_6_rights_62": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "\u00a9 2014 Trans Tech Publications, Switzerland"}]}, "item_6_select_64": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_6_source_id_35": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1662-9752 ", "subitem_source_identifier_type": "ISSN"}]}, "item_6_source_id_39": {"attribute_name": "NII ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1662-9752 ", "subitem_source_identifier_type": "ISSN"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Akahane, Yoshiyuki"}], "nameIdentifiers": [{"nameIdentifier": "51539", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kano, Takuo"}], "nameIdentifiers": [{"nameIdentifier": "51540", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kimura, Kyosuke"}], "nameIdentifiers": [{"nameIdentifier": "51541", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Komatsu, Hiroki"}], "nameIdentifiers": [{"nameIdentifier": "51542", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Watanabe, Yukimune"}], "nameIdentifiers": [{"nameIdentifier": "51543", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yamakami, Tomohiko"}], "nameIdentifiers": [{"nameIdentifier": "51544", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kamimura  Kiichi"}], "nameIdentifiers": [{"nameIdentifier": "51545", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2016-11-01"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "MSF778-780_pp631-634.pdf", "filesize": [{"value": "524.1 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensefree": "\u00a9 2014 Trans Tech Publications, Switzerland", "licensetype": "license_note", "mimetype": "application/pdf", "size": 524100.0, "url": {"label": "MSF778-780_pp631-634.pdf", "url": "https://soar-ir.repo.nii.ac.jp/record/18502/files/MSF778-780_pp631-634.pdf"}, "version_id": "8b0d2093-2e44-4a12-ac05-9cf4b8c34735"}]}, "item_keyword": {"attribute_name": "\u30ad\u30fc\u30ef\u30fc\u30c9", "attribute_value_mlt": [{"subitem_subject": "MIS", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Nitride", "subitem_subject_scheme": "Other"}, {"subitem_subject": "TEOS", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation", "subitem_title_language": "en"}]}, "item_type_id": "6", "owner": "1", "path": ["1221/1222"], "permalink_uri": "http://hdl.handle.net/10091/00019264", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2016-11-01"}, "publish_date": "2016-11-01", "publish_status": "0", "recid": "18502", "relation": {}, "relation_version_is_last": true, "title": ["Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation"], "weko_shared_id": -1}
  1. 060 工学部
  2. 0601 学術論文

Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation

http://hdl.handle.net/10091/00019264
7ce925c1-cc2b-4f42-9c27-3ef0d3d0a6ec
名前 / ファイル ライセンス アクション
MSF778-780_pp631-634.pdf MSF778-780_pp631-634.pdf (524.1 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2016-11-01
タイトル
言語 en
タイトル Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation
言語
言語 eng
キーワード
主題Scheme Other
主題 MIS
キーワード
主題Scheme Other
主題 Nitride
キーワード
主題Scheme Other
主題 TEOS
資源タイプ
資源 http://purl.org/coar/resource_type/c_6501
タイプ journal article
著者 Akahane, Yoshiyuki

× Akahane, Yoshiyuki

WEKO 51539

Akahane, Yoshiyuki

Search repository
Kano, Takuo

× Kano, Takuo

WEKO 51540

Kano, Takuo

Search repository
Kimura, Kyosuke

× Kimura, Kyosuke

WEKO 51541

Kimura, Kyosuke

Search repository
Komatsu, Hiroki

× Komatsu, Hiroki

WEKO 51542

Komatsu, Hiroki

Search repository
Watanabe, Yukimune

× Watanabe, Yukimune

WEKO 51543

Watanabe, Yukimune

Search repository
Yamakami, Tomohiko

× Yamakami, Tomohiko

WEKO 51544

Yamakami, Tomohiko

Search repository
Kamimura Kiichi

× Kamimura Kiichi

WEKO 51545

Kamimura Kiichi

Search repository
信州大学研究者総覧へのリンク
氏名 Kamimura, Kiichi
URL http://soar-rd.shinshu-u.ac.jp/profile/ja.yVkaZVkh.html
出版者
出版者 Trans Tech Publications
引用
内容記述タイプ Other
内容記述 Materials Science Forum, Vols. 778-780, pp. 631-634 (2014)
書誌情報 Materials Science Forum

巻 778-780, p. 631-634, 発行日 2014-02
抄録
内容記述タイプ Abstract
内容記述 A nitride layer was formed on a SiC surface by plasma nitridation using pure nitrogen as the reaction gas at the temperature from 800°C to 1400°C. The surface was characterized by XPS. The XPS measurement showed that an oxinitride layer was formed on the SiC surface by the plasma nitridation. The high process temperature seemed to be effective to activate the niridation reaction. A SiO2 film was deposited on the nitridation layer to form SiO2/nitride/SiC structure. The interface state density of the SiO2/nitride/SiC structure was lower than that of the SiO2/SiC structure. This suggested that the nitridation was effective to improve the interface property.
資源タイプ(コンテンツの種類)
内容記述タイプ Other
内容記述 Article
ISSN
収録物識別子タイプ ISSN
収録物識別子 1662-9752
DOI
関連識別子
識別子タイプ DOI
関連識別子 https://doi.org/10.4028/www.scientific.net/MSF.778-780.631
関連名称
関連名称 10.4028/www.scientific.net/MSF.778-780.631
権利
権利情報 © 2014 Trans Tech Publications, Switzerland
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
戻る
0
views
See details
Views

Versions

Ver.1 2021-03-01 09:08:57.016079
Show All versions

Share

Mendeley CiteULike Twitter Facebook Print Addthis

Cite as

Export

OAI-PMH
  • OAI-PMH JPCOAR
  • OAI-PMH DublinCore
  • OAI-PMH DDI
Other Formats
  • JSON
  • BIBTEX

Confirm


Powered by CERN Data Centre & Invenio


Powered by CERN Data Centre & Invenio