{"_buckets": {"deposit": "439d9e38-e6a6-4218-97f4-e7e99dfc6966"}, "_deposit": {"id": "18502", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "18502"}, "status": "published"}, "_oai": {"id": "oai:soar-ir.repo.nii.ac.jp:00018502"}, "item_6_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2014-02", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "634", "bibliographicPageStart": "631", "bibliographicVolumeNumber": "778-780", "bibliographic_titles": [{"bibliographic_title": "Materials Science Forum"}]}]}, "item_6_description_20": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "A nitride layer was formed on a SiC surface by plasma nitridation using pure nitrogen as the reaction gas at the temperature from 800\u00b0C to 1400\u00b0C. The surface was characterized by XPS. The XPS measurement showed that an oxinitride layer was formed on the SiC surface by the plasma nitridation. The high process temperature seemed to be effective to activate the niridation reaction. A SiO2 film was deposited on the nitridation layer to form SiO2/nitride/SiC structure. The interface state density of the SiO2/nitride/SiC structure was lower than that of the SiO2/SiC structure. This suggested that the nitridation was effective to improve the interface property. 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