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Number of traps and trap depth position on statistical distribution of random telegraph noise in scaled NAND flash memory
http://hdl.handle.net/10091/00020334
http://hdl.handle.net/10091/000203342c58917e-bf4c-41fd-a773-c999b01dd60d
| 名前 / ファイル | ライセンス | アクション |
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Number_of_traps_and_trap_depth_position_on_statistical_distribution_of_random_telegraph_noise_in_scaled_NAND_flash_memory.pdf (995.2 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||
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| 公開日 | 2018-03-09 | |||||||||
| タイトル | ||||||||||
| タイトル | Number of traps and trap depth position on statistical distribution of random telegraph noise in scaled NAND flash memory | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| DOI | ||||||||||
| 関連識別子 | https://doi.org/10.7567/JJAP.55.04EE08 | |||||||||
| 関連名称 | 10.7567/JJAP.55.04EE08 | |||||||||
| 資源タイプ | ||||||||||
| 資源 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| タイプ | journal article | |||||||||
| 著者 |
Tomita, Toshihiro
× Tomita, Toshihiro
× Miyaji, Kousuke
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| 信州大学研究者総覧へのリンク | ||||||||||
| 氏名 | Miyaji, Kousuke | |||||||||
| URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.yenpWFLa.html | |||||||||
| 出版者 | ||||||||||
| 出版者 | IOP PUBLISHING LTD | |||||||||
| 引用 | ||||||||||
| 内容記述 | JAPANESE JOURNAL OF APPLIED PHYSICS. 55(4): 04EE08 (2016) | |||||||||
| 書誌情報 |
JAPANESE JOURNAL OF APPLIED PHYSICS 巻 55, 号 4, p. 04EE08, 発行日 2016 |
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| 抄録 | ||||||||||
| 内容記述 | The dependence of random telegraph noise (RTN) amplitude distribution on the number of traps and trap depth position is investigated using three-dimensional Monte Carlo device simulation including random dopant fluctuation (RDF) in a 30 nm NAND multi level flash memory. The Delta V-th tail distribution becomes broad at fixed double traps, indicating that the number of traps greatly affects the worst RTN characteristics. It is also found that for both fixed single and fixed double traps, the Delta V-th distribution in the lowest cell threshold voltage (V-th) state shows the broadest distribution among all cell V-th states. This is because the drain current flows at the channel surface in the lowest cell V-th state, while at a high cell V-th, it flows at the deeper position owing to the fringing coupling between the control gate (CG) and the channel. In this work, the Delta V-th distribution with the number of traps following the Poisson distribution is also considered to cope with the variations in trap number. As a result, it is found that the number of traps is an important factor for understanding RTN characteristics. In addition, considering trap position in the tunnel oxide thickness direction is also an important factor. (C) 2016 The Japan Society of Applied Physics | |||||||||
| 資源タイプ（コンテンツの種類） | ||||||||||
| ISSN | ||||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 0021-4922 | |||||||||
| 権利 | ||||||||||
| 権利情報 | © 2016 The Japan Society of Applied Physics | |||||||||
| 出版タイプ | ||||||||||
| 出版タイプ | AM | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||
| WoS | ||||||||||
| URL | http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000373929400063 | |||||||||
