{"_buckets": {"deposit": "ee548e05-c198-4b18-8ed3-77f1e426bc40"}, "_deposit": {"id": "12313", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "12313"}, "status": "published"}, "_oai": {"id": "oai:soar-ir.repo.nii.ac.jp:00012313", "sets": ["1221:1222"]}, "item_6_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2014-09-01", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "149", "bibliographicPageStart": "146", "bibliographicVolumeNumber": "401", "bibliographic_titles": [{"bibliographic_title": "JOURNAL OF CRYSTAL GROWTH"}]}]}, "item_6_description_20": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "A new technique is proposed in the traditional vertical Bridgman growth of sapphire crystals, in which thin-neck formation follows the initial seeding. 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Low-angle grain boundaries generated at the periphery of the seeding interface were eliminated at the thin neck, and the c-axis sapphire crystals with main bodies free from low-angle grain boundaries were grown. 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