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Vertical Bridgman growth of sapphire crystals, with thin-neck formation process
http://hdl.handle.net/10091/18108
http://hdl.handle.net/10091/1810818e3906f-6dde-42bc-9a7e-a5c32d588508
| 名前 / ファイル | ライセンス | アクション |
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VB_sapphire_with_thin_neck.pdf (334.1 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||||
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| 公開日 | 2015-02-19 | |||||||||||||||||||
| タイトル | ||||||||||||||||||||
| タイトル | Vertical Bridgman growth of sapphire crystals, with thin-neck formation process | |||||||||||||||||||
| 言語 | ||||||||||||||||||||
| 言語 | eng | |||||||||||||||||||
| DOI | ||||||||||||||||||||
| 関連識別子 | https://doi.org/10.1016/j.jcrysgro.2013.12.051 | |||||||||||||||||||
| 関連名称 | 10.1016/j.jcrysgro.2013.12.051 | |||||||||||||||||||
| キーワード | ||||||||||||||||||||
| 主題 | Bridgman technique, Growth from melt, Seed crystals, Single crystal growth, Sapphire, Light emitting diodes | |||||||||||||||||||
| 資源タイプ | ||||||||||||||||||||
| 資源 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||||
| タイプ | journal article | |||||||||||||||||||
| 著者 |
Hoshikawa, K
× Hoshikawa, K
× Taishi, T
× Ohba, E
× Miyagawa, C
× Kobayashi, T
× Yanagisawa, J
× Shinozuka, M
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| 信州大学研究者総覧へのリンク | ||||||||||||||||||||
| 氏名 | Hoshikawa, K | |||||||||||||||||||
| URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.jakhPpym.html | |||||||||||||||||||
| 信州大学研究者総覧へのリンク | ||||||||||||||||||||
| 氏名 | Taishi, T | |||||||||||||||||||
| URL | http://soar-rd.shinshu-u.ac.jp/profile/ja.jhTePmSF.html | |||||||||||||||||||
| 出版者 | ||||||||||||||||||||
| 出版者 | ELSEVIER SCIENCE BV | |||||||||||||||||||
| 引用 | ||||||||||||||||||||
| 内容記述 | JOURNAL OF CRYSTAL GROWTH. 401:146-149 (2014) | |||||||||||||||||||
| 書誌情報 |
JOURNAL OF CRYSTAL GROWTH 巻 401, p. 146-149, 発行日 2014-09-01 |
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| 抄録 | ||||||||||||||||||||
| 内容記述 | A new technique is proposed in the traditional vertical Bridgman growth of sapphire crystals, in which thin-neck formation follows the initial seeding. Low-angle grain boundaries generated at the periphery of the seeding interface were eliminated at the thin neck, and the c-axis sapphire crystals with main bodies free from low-angle grain boundaries were grown. | |||||||||||||||||||
| 資源タイプ（コンテンツの種類） | ||||||||||||||||||||
| ISSN | ||||||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||||||
| 収録物識別子 | 0022-0248 | |||||||||||||||||||
| 書誌レコードID | ||||||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||||||
| 収録物識別子 | AA00696341 | |||||||||||||||||||
| 権利 | ||||||||||||||||||||
| 権利情報 | Copyright © 2014 Published by Elsevier B.V.<br/>NOTICE: this is the author's version of a work that was accepted for publication in JOURNAL OF CRYSTAL GROWTH.<br/> Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, <br/> and other quality control mechanisms may not be reflected in this document. <br/> Changes may have been made to this work since it was submitted for publication. <br/> A definitive version was subsequently published in JOURNAL OF CRYSTAL GROWTH<br/>, VOL:401, (2014) DOI:10.1016/j.jcrysgro.2013.12.051 | |||||||||||||||||||
| 出版タイプ | ||||||||||||||||||||
| 出版タイプ | AM | |||||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||||||||||
| WoS | ||||||||||||||||||||
| URL | http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000340001800030 | |||||||||||||||||||
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Cite as
Hoshikawa, K, Taishi, T, Ohba, E, Miyagawa, C, Kobayashi, T, Yanagisawa, J, Shinozuka, M, 2014, Vertical Bridgman growth of sapphire crystals, with thin-neck formation process: ELSEVIER SCIENCE BV, 146–149 p.
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