{"_buckets": {"deposit": "1ab8c04d-a2c1-4b7f-8e91-212074540701"}, "_deposit": {"id": "12383", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "12383"}, "status": "published"}, "_oai": {"id": "oai:soar-ir.repo.nii.ac.jp:00012383", "sets": ["1222"]}, "author_link": ["37676", "37677", "37678", "37679", "37680", "37681", "37682", "37683", "37684"], "item_1628147817048": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_6_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2010-09-15", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "19", "bibliographicPageEnd": "2787", "bibliographicPageStart": "2783", "bibliographicVolumeNumber": "312", "bibliographic_titles": [{"bibliographic_title": "JOURNAL OF CRYSTAL GROWTH"}]}]}, "item_6_description_20": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Oxygen-containing germanium (Ge) single crystals with low density of grown-in dislocations were grown by the Czochralski (CZ) technique from a Ge melt, both with and without a covering by boron oxide (B(2)O(3)) liquid. Interstitially dissolved oxygen concentrations in the crystals were determined by the absorption peak at 855 cm(-1) in the infrared absorption spectra at room temperature. It was found that oxygen concentration in a Ge crystal grown from melt partially or fully covered with B(2)O(3) liquid was about 10(16) cm(-3) and was almost the same as that in a Ge crystal grown without B(2)O(3). Oxygen concentration in a Ge crystal was enhanced to be greater than 10(17) cm(-3) by growing a crystal from a melt fully covered with B(2)O(3); with the addition of germanium oxide powder, the maximum oxygen concentration achieved was 5.5 x 10(17) cm(-3). The effective segregation coefficients of oxygen in the present Ge crystal growth were roughly estimated to be between 1.0 and 1.4.", "subitem_description_type": "Abstract"}]}, "item_6_description_30": {"attribute_name": "資源タイプ（コンテンツの種類）", "attribute_value_mlt": [{"subitem_description": "Article", "subitem_description_type": "Other"}]}, "item_6_description_5": {"attribute_name": "引用", "attribute_value_mlt": [{"subitem_description": "JOURNAL OF CRYSTAL GROWTH. 312(19):2783-2787 (2010)", "subitem_description_type": "Other"}]}, "item_6_link_3": {"attribute_name": "信州大学研究者総覧へのリンク", "attribute_value_mlt": [{"subitem_link_text": "Taishi, Toshinori", "subitem_link_url": "http://soar-rd.shinshu-u.ac.jp/profile/ja.jhTePmSF.html"}, {"subitem_link_text": "Hoshikawa, Keigo", "subitem_link_url": "http://soar-rd.shinshu-u.ac.jp/profile/ja.jakhPpym.html"}]}, "item_6_link_67": {"attribute_name": "WoS", "attribute_value_mlt": [{"subitem_link_text": "Web of Science", "subitem_link_url": "http://gateway.isiknowledge.com/gateway/Gateway.cgi?\u0026GWVersion=2\u0026SrcAuth=ShinshuUniv\u0026SrcApp=ShinshuUniv\u0026DestLinkType=FullRecord\u0026DestApp=WOS\u0026KeyUT=000282349500026"}]}, "item_6_publisher_4": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "ELSEVIER SCIENCE BV"}]}, "item_6_relation_48": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "10.1016/j.jcrysgro.2010.05.045"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1016/j.jcrysgro.2010.05.045", "subitem_relation_type_select": "DOI"}}]}, "item_6_rights_62": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright© 2010 Elsevier B.V."}]}, "item_6_select_64": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_6_source_id_35": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0022-0248", "subitem_source_identifier_type": "ISSN"}]}, "item_6_source_id_39": {"attribute_name": "NII ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0022-0248", "subitem_source_identifier_type": "ISSN"}]}, "item_6_source_id_40": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00696341", "subitem_source_identifier_type": "NCID"}]}, "item_6_text_69": {"attribute_name": "wosonly authkey", "attribute_value_mlt": [{"subitem_text_value": "Doping; Oxygen impurity; Czochralski method; Single crystal growth; Semiconducting germanium"}]}, "item_6_text_70": {"attribute_name": "wosonly keywords", "attribute_value_mlt": [{"subitem_text_value": "SILICON-CRYSTALS; DEFECTS"}]}, "item_6_textarea_68": {"attribute_name": "wosonly abstract", "attribute_value_mlt": [{"subitem_textarea_value": "Oxygen-containing germanium (Ge) single crystals with low density of grown-in dislocations were grown by the Czochralski (CZ) technique from a Ge melt, both with and without a covering by boron oxide (B(2)O(3)) liquid. Interstitially dissolved oxygen concentrations in the crystals were determined by the absorption peak at 855 cm(-1) in the infrared absorption spectra at room temperature. It was found that oxygen concentration in a Ge crystal grown from melt partially or fully covered with B(2)O(3) liquid was about 10(16) cm(-3) and was almost the same as that in a Ge crystal grown without B(2)O(3). Oxygen concentration in a Ge crystal was enhanced to be greater than 10(17) cm(-3) by growing a crystal from a melt fully covered with B(2)O(3); with the addition of germanium oxide powder, the maximum oxygen concentration achieved was 5.5 x 10(17) cm(-3). The effective segregation coefficients of oxygen in the present Ge crystal growth were roughly estimated to be between 1.0 and 1.4. (C) 2010 Elsevier B.V. All rights reserved."}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Taishi,  Toshinori"}], "nameIdentifiers": [{"nameIdentifier": "37676", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ise,  Hideaki"}], "nameIdentifiers": [{"nameIdentifier": "37677", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Murao,  Yu"}], "nameIdentifiers": [{"nameIdentifier": "37678", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Osawa,  Takayuki"}], "nameIdentifiers": [{"nameIdentifier": "37679", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Suezawa,  Masashi"}], "nameIdentifiers": [{"nameIdentifier": "37680", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Tokumoto,  Yuki"}], "nameIdentifiers": [{"nameIdentifier": "37681", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohno,  Yutaka"}], "nameIdentifiers": [{"nameIdentifier": "37682", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hoshikawa,  Keigo"}], "nameIdentifiers": [{"nameIdentifier": "37683", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yonenaga,  Ichiro"}], "nameIdentifiers": [{"nameIdentifier": "37684", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2015-09-28"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "Czochralski-growth_germanium_crystals_containing_high.pdf", "filesize": [{"value": "337.8 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 337800.0, "url": {"label": "Czochralski-growth_germanium_crystals_containing_high.pdf", "url": "https://soar-ir.repo.nii.ac.jp/record/12383/files/Czochralski-growth_germanium_crystals_containing_high.pdf"}, "version_id": "4e477cb5-c858-4e10-980f-74c98afb669b"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "Doping", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Oxygen impurity", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Czochralski method", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Single crystal growth", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Semiconducting germanium", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities", "subitem_title_language": "en"}]}, "item_type_id": "6", "owner": "1", "path": ["1222"], "permalink_uri": "http://hdl.handle.net/10091/16197", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2013-01-25"}, "publish_date": "2013-01-25", "publish_status": "0", "recid": "12383", "relation": {}, "relation_version_is_last": true, "title": ["Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities"], "weko_shared_id": -1}