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  1. 060 工学部
  2. 0601 学術論文

Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode

http://hdl.handle.net/10091/15982
http://hdl.handle.net/10091/15982
74114fe6-d903-4c2b-b541-57bb501436ee
名前 / ファイル ライセンス アクション
Interface_State_Density_Direct_Nitridation.pdf Interface_State_Density_Direct_Nitridation.pdf (382.5 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2012-09-21
タイトル
言語 en
タイトル Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode
言語
言語 eng
キーワード
主題Scheme Other
主題 SiC
キーワード
主題Scheme Other
主題 nitride
キーワード
主題Scheme Other
主題 interface
キーワード
主題Scheme Other
主題 MIS Schottky
資源タイプ
資源 http://purl.org/coar/resource_type/c_6501
タイプ journal article
著者 Kamimura, Kiichi

× Kamimura, Kiichi

WEKO 37771

Kamimura, Kiichi

Search repository
Shiozawa, Hiroaki

× Shiozawa, Hiroaki

WEKO 37772

Shiozawa, Hiroaki

Search repository
Yamakami, Tomohiko

× Yamakami, Tomohiko

WEKO 37773

Yamakami, Tomohiko

Search repository
Hayashibe, Rinpei

× Hayashibe, Rinpei

WEKO 37774

Hayashibe, Rinpei

Search repository
信州大学研究者総覧へのリンク
氏名 Kamimura, Kiichi
URL http://soar-rd.shinshu-u.ac.jp/profile/ja.yVkaZVkh.html
出版者
出版者 IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
引用
内容記述タイプ Other
内容記述 IEICE TRANSACTIONS ON ELECTRONICS. E92C(12):1470-1474 (2009)
書誌情報 IEICE TRANSACTIONS ON ELECTRONICS

巻 E92C, 号 12, p. 1470-1474, 発行日 2009-12
抄録
内容記述タイプ Abstract
内容記述 Interface state density was estimated from diode factor n of SiC MIS Schottky diode. The interface state density was the order of 10(12) cm(-2)eV(-1), and was same order to the value for the sample carefully prepared by oxidation and post oxidation annealing. The interface state density determined from n was consistent to the value calculated from the capacitance voltage curve of SiO(2)/nitride/SiC MIS diode by Terman method. High temperature nitridation was effective to reduce the interface state density.
資源タイプ(コンテンツの種類)
内容記述タイプ Other
内容記述 Article
ISSN
収録物識別子タイプ ISSN
収録物識別子 0916-8524
書誌レコードID
収録物識別子タイプ NCID
収録物識別子 AA10826283
他の資源との関係:URI
識別子タイプ URI
関連識別子 http://search.ieice.org/
関連名称 http://search.ieice.org/
DOI
識別子タイプ DOI
関連識別子 https://doi.org/10.1587/transele.E92.C.1470
関連名称 10.1587/transele.E92.C.1470
権利
権利情報 Copyright© 2009 IEICE
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
WoS
表示名 Web of Science
URL http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=ShinshuUniv&SrcApp=ShinshuUniv&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000273190900012
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